Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy

Fay, Mike W. and Han, Y. and Novikov, Sergei V. and Edmonds, K.W. and Wang, K. and Gallagher, B.L. and Campion, R.P. and Foxon, C.T. and Brown, Paul D. (2005) Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by molecular beam epitaxy. In: Microscopy of semiconducting materials: proceedings of the 14th conference: April 11-14, 2005, Oxford, UK. Springer proceedings in physics (107). Springer-Verlag, Berlin, pp. 143-146. ISBN 9783540319146

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Abstract

Observations of orthogonal orientations demonstrate the development of banded contrast features on inclined {-1-1-1}B planes for the [110] projection within micron thick samples, attributed to a compositional fluctuation in the Mn content. The relationship of Mn content and layer critical thickness for the onset of precipitate and stacking fault formation is investigated. The formation of a Mn-O layer at the surface of the samples is also observed. The growth of GaMnN/(001)GaAs heterostructures with and without AlN/GaN buffer layers is also compared. Layers without buffer layers show MnAs inclusions into the GaAs, with a reduced Mn content of the GaMnN layer significantly below the nominal composition. The use of AlN/GaN buffer layers is found to greatly reduce the density of these MnAs inclusions, retaining a higher proportion of the Mn within the epilayer.

Item Type: Book Section
Additional Information: The original publication is available at www.springerlink.com
Uncontrolled Keywords: TEM, spintronics, GaMnAs, GaMnN, MBE
Schools/Departments: University of Nottingham UK Campus > Faculty of Engineering > Department of Mechanical, Materials and Manufacturing Engineering
Depositing User: Brown, Prof Paul D
Date Deposited: 12 Aug 2011 16:22
Last Modified: 12 Aug 2013 11:50
URI: http://eprints.nottingham.ac.uk/id/eprint/1469

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