Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN

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Fay, Mike W., Harrison, Ian, Birbeck, J.C., Hughes, B.T., Uren, M.J., Martin, T. and Brown, Paul D. (2001) Microstructural characterisation of TiAlTiAu and TiAlPdAu ohmic contacts to AlGaN/GaN. In: Electron microscopy and analysis 2001: proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Dundee, 5-7 September. Institute of Physics conference series (168). IOP Publishing Ltd, Bristol, pp. 497-500. ISBN 9780750308120

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Abstract

Ti/Al/Ti/Au and Ti/Al/Pd/Au contacts to AlGaN/GaN have been investigated to ascertain the effect of annealing temperature on the structural evolution of the contacts. Ti/Al/Ti/Au contacts become ohmic after rapid thermal annealing at 750°C or higher, corresponding to the formation of an interfacial TiN phase, with inclusions penetrating through the AlGaN layer observed after annealing at 950°C. The Pd layer is shown to be more efficient at inhibiting diffusion of Au to the interface than Ti. Ohmic behaviour was not seen with the Ti/Al/Pd/Au scheme. Either the presence of Au at the interface may improve ohmic behaviour, or the Ti:Al ratio is insufficient in this scheme.

Item Type:

Book Section

RIS ID:

https://nottingham-repository.worktribe.com/output/1023317

Keywords:

TEM, TiAlTiAu, TiAlPdAu, AlGaN/GaN, ohmic contact

Schools/Departments:

University of Nottingham, UK > Faculty of Engineering > Department of Mechanical, Materials and Manufacturing Engineering

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