EBIC study of Au / n-type GaN Schottky contacts

Moldovan, Grigore and Harrison, Ian and Brown, Paul D. (2003) EBIC study of Au / n-type GaN Schottky contacts. In: Microscopy of semiconducting materials 2003 : proceedings of the Institute of Physics conference, Cambridge University, 31 March - 3 April 2003. Institute of Physics conference series (180). IOP Publishing Ltd, Bristol, pp. 577-580. ISBN 9780750309790

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The performance of Au / n-type GaN Schottky contacts is strongly dependent on the GaN surface processing prior to contacting. Current-voltage and EBIC line scans demonstrate that KOH treatment acts to degrade the Schottky contacts. EBIC imaging reveals the differing sub-grain boundary structures of MBE and MOCVD grown GaN / sapphire. The KOH treatment acts to uniformly change the properties of the GaN surface, rather than having a localised effect.

Item Type: Book Section
Keywords: EBIC, Schottky contact, GaN
Schools/Departments: University of Nottingham, UK > Faculty of Engineering > Department of Mechanical, Materials and Manufacturing Engineering
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Depositing User: Brown, Prof Paul D
Date Deposited: 19 May 2011 13:46
Last Modified: 02 Jul 2018 08:36
URI: http://eprints.nottingham.ac.uk/id/eprint/1464

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