EBIC study of Au / n-type GaN Schottky contacts
Moldovan, Grigore and Harrison, Ian and Brown, Paul D. (2003) EBIC study of Au / n-type GaN Schottky contacts. In: Microscopy of semiconducting materials 2003 : proceedings of the Institute of Physics conference, Cambridge University, 31 March - 3 April 2003. Institute of Physics conference series (180). IOP Publishing Ltd, Bristol, pp. 577-580. ISBN 9780750309790
The performance of Au / n-type GaN Schottky contacts is strongly dependent on the GaN surface processing prior to contacting. Current-voltage and EBIC line scans demonstrate that KOH treatment acts to degrade the Schottky contacts. EBIC imaging reveals the differing sub-grain boundary structures of MBE and MOCVD grown GaN / sapphire. The KOH treatment acts to uniformly change the properties of the GaN surface, rather than having a localised effect.
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