TEM assessment of As-doped GaN epitaxial layers grown on sapphire

Fay, Mike W. and Harrison, Ian and Larkins, Eric C. and Novikov, Sergei V. and Foxon, C.T. and Brown, Paul D. (2004) TEM assessment of As-doped GaN epitaxial layers grown on sapphire. In: Electron Microscopy and Analysis 2003: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference, University of Oxford, 3-5 September 2003. Institute of Physics conference series (179). Institute of Physics Publishing, Bristol, pp. 23-26. ISBN 0750309679

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Abstract

TEM investigations of As-doped GaN layers grown by plasma-assisted molecular beam epitaxy on sapphire substrates reveal the presence of extensive regions of cubic stacking disorder within the hexagonal GaN matrix. Electron energy loss spectroscopy suggests the localization of As within grains immediately below domains containing stacking disorder, and additionally at the layer surface. This suggests that localised strain plays a role in the formation mechanism of the stacking faults.

Item Type:Book Section
Uncontrolled Keywords:EELS TEM GaN Epitaxy Doping PAMBE
Schools/Departments:University of Nottingham UK Campus > Faculty of Engineering > Department of Electrical and Electronic Engineering
ID Code:1442
Deposited By:Brown, Prof Paul D
Deposited On:25 Mar 2011 19:35
Last Modified:12 Aug 2013 13:34

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